PART |
Description |
Maker |
FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率,高频率,按包装类
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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2SC1722 |
LOW FREQUENCY HIGH VOLTAHE POWER AMPLIFIER TV POWER SUPPLY DRIVER LOW FREQUENCY POWER AMPLIFIER TV HORIZONTAL/VERTICAL DRIV
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List of Unclassifed Manufacturers ETC[ETC]
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IRF3704ZLPBF IRF3704ZSLPBF IRF3704ZPBF IRF3704ZSPB |
High Frequency Synchronous Buck High Frequency Synchronous Buck Converters for Computer Processor Power
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International Rectifier
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KSC945Y KSC945CG KSC945CL KSC945CO KSC945CR KSC945 |
NPN Epitaxial Silicon Transistor Audio Frequency Amplifier & High Frequency OSC. Audio Frequency Amplifier & High Frequency OSC.
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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4126L-T60-T 4126 4126-T60-T |
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 200 V, NPN, Si, POWER TRANSISTOR, TO-126 HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 高频开关晶体管BALLASTERS
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Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
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SRN8040 SRN8040-100M SRN8040-101M SRN8040-150M SRN |
Semi-shielded Power Inductors
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Bourns Electronic Solutions
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
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UTC ROHM[Rohm]
|
PPW PPW-15 PPW-10 |
Semi-Precision Power Wirewound Resistors
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TT Electronics / Welwyn
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AS-1 |
Semi-Precision Power Wirewound Resistor
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Welwyn Components Limited
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AS-2R250DLF AS-2R250FLF AS-2R250HLF AS-2R250JLF AS |
Semi-Precision Power Wirewound Resistor
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IRC - a TT electronics Company.
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AS568 |
Semi-Precision Power Wirewound Resistor
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International Resistive
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